Product Summary

The STP3NK100Z is a Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout.

Parametrics

Absolute maximum ratings: (1)Drain-source voltage (VGS = 0):1000V; (2)Gate-source voltage:± 30V; (3)Drain current (continuous) at TC = 25℃:2.5A; (4)Drain current (continuous) at TC = 100℃:1.57A; (5)Drain current (pulsed):10A; (6)Total dissipation at TC = 25℃:90W; (7)Derating factor:0.72W/℃; (8)Gate source ESD (HBM-C=100pF, R=1.5KΩ):3000V; (9)Peak diode recovery voltage slope:4.5V/ns; (10)Operating junction temperature:-55℃ to 150℃; (11)Storage temperature:-55℃ to 150℃.

Features

Features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP3NK100Z
STP3NK100Z
STMicroelectronics
MOSFET 1000V 5.4Ohm 2.5A Zener SuperMESH
Data Sheet
0-1: $1.83
1-10: $1.53
10-100: $1.31
100-250: $1.18
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP30N65M5
STP30N65M5
STMicroelectronics
MOSFET N-channel 650 V MDMesh
Data Sheet
0-646: $3.16
646-1000: $2.75
1000-2000: $2.61
STP31N65M5
STP31N65M5
STMicroelectronics
MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
Data Sheet
0-1: $4.72
1-10: $3.87
10-100: $3.49
100-250: $3.22
STP30NF20
STP30NF20
STMicroelectronics
MOSFET Low charge STripFET
Data Sheet
0-1: $1.54
1-10: $1.27
10-100: $1.10
100-250: $0.97
STP30NM60ND
STP30NM60ND
STMicroelectronics
MOSFET N-channel 600V, 25A FDMesh II
Data Sheet
0-1: $5.20
1-10: $4.67
10-100: $3.84
100-250: $3.32
STP32NM50N
STP32NM50N
STMicroelectronics
MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET
Data Sheet
0-480: $2.27
480-500: $2.05
500-1000: $1.94
1000-2000: $1.84
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-Ch 60 Volt 30 Amp
Data Sheet
0-1: $0.83
1-10: $0.70
10-100: $0.58
100-250: $0.52